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TechnicalFeature 技术特写

于CMOS工艺的毫米波无源带通滤波器 Symposium, X’ian, March 2014, pp. 1–4.
TL 5 C 3 TL 6 8. B. Dehlink, M. Engl, K. Aufinger and H. Knapp, “Integrated
21
N 1 N 2 的诸多局限性与设计难点 。文献中指 Bandpass Filter at 77 GHz in SiGe Technology,” IEEE
Microwave and Wireless Components Letters, Vol. 17, No. 5,
出，暂无CMOS无源滤波器的3dB分数带 May 2007, pp. 346–348.
C 1 TL 1 TL 2 C 2 9. M. -C. Lu, J. -F. Chang, L. -C. Lu and Y. -S. Lin, “Miniature
宽能低于10%或高于65%。分数带宽在 60-GHz-Band Bandpass Filter with 2.55-dB Insertion-Loss
20%以下的滤波器损耗很大。因此，要 Using Standard 0.13 μm CMOS Technology,” Microwave
and Optical Technology Letters, Vol. 51, No. 7, April 2009,
实现低插入损耗的窄带无源带通滤波器 pp. 1632–1635.
TL 3 TL 4 10. V. N. R. Vanukuru, N. Godavarthi and A. Chakravorty,
是一大挑战。另一个设计难点是实现具 “Miniaturized Millimeter wave Narrow Bandpass Filter
有高带外抑制水平的无源滤波器。 in 0.18 μm CMOS Technology Using Spiral Inductors and
Inter Digital Capacitors,” IEEE International Conference on
Signal Processing and Communications, July 2014, pp. 1–4.
图3：平面π型结构的小型CMOS无源带 总结 11. C. -Y. Hsu, C. -Y. Chen and H. -R. Chuang, “A 77-
通滤波器。 GHz CMOS On-Chip Bandpass Filter with Balanced and
Unbalanced Outputs,” IEEE Electron Device Letters, Vol.
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面π型滤波器结构有着带宽不受布局和 的优缺点、设计技术、拓扑结构以及设 12. C. -Y. Hsu, C. -Y. Chen and H. -R. Chuang, “A 60-GHz
Millimeter wave Bandpass Filter Using 0.18-μm CMOS
衬底厚度影响的优点。因此这种结构具 计挑战。片式无源带通滤波器的主要缺 Technology,”IEEE Electron Device Letters, Vol. 29, No. 3,
April 2008, pp. 246–248. 13. S. Luo, C. C. Boon, L. Zhu, M.
备很大的设计空间。然而同时，它也 点包括高损耗以及带宽和插入损耗间的 A. Do and A. V. Do, “A Compact Millimeter wave CMOS
存在两个缺点：面积大、SOC集成难度 权衡。还讨论并比较了用于实现毫米波 Bandpass Filter Using a Dual-Mode Ring Resonator,” IEEE
International Symposium on Integrated Circuits, December
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高。这两点可以通过应用紧凑型微带线 滤波器的各类工艺技术。希望本文能帮 14. S. -C. Chang, Y. -M. Chen, S. -F. Chang, Y. -H. Jeng, C. -L.
9
（MSL）电感来解决 。图3为π型结构的 助研究人员认清差距，为毫米波滤波器 Wei, C. -H Huang and C. -P. Jeng, “Compact Millimeter
wave CMOS Bandpass Filters Using Grounded Pedestal
CMOS无源带通滤波器原理图。该小型 设计领域的未来发展助一臂之力。■ Stepped-Impedance Technique,”IEEE Transactions
带通滤波器采用了微型片式MIM电容和 on Microwave Theory and Techniques, Vol. 58, No. 12,
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MSL电感来加以实现。 参考文献 15. H. -R. Lin, C. -Y.Hsu, L. -K. Yeh, H. -R. Chuang and C. -Y.
Chen, “A 77-GHz CMOS On-Chip Bandpass Filter Using
1. R. C. Daniels, J. N. Murdock, T. S. Rappaport and R. W. Heath, Jr.,
多位作者 2,6,9,10,19-21 比较了以往发表的 “60 GHz Wireless: Up Close and Personal,” IEEE Microwave Slow-Wave Stepped-Impedance Resonators,”IEEE Asia-
Pacific Microwave Conference, December 2010, pp. 826–828.
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无源带通滤波器性能参数。表3总结了不 2. L. Nan, K. Mouthaan, Y. -Z. Xiong, J. Shi, S. C. Rustagi and 16. H. -H. Lin, W. -S. Tung, J. -C. Cheng and Y. -C. Chiang,
同毫米波无源带通滤波器的性能，其中 B. -L Ooi, “Design of 60- and 77-GHz Narrow-Bandpass “Design of Second Order Band-Pass Filter with
Filters in CMOS Technology,” IEEE Transactions on Inductive P-Network Coupling,” IEICE Transactions on
fC为中心频率。3dB带宽也称为3dB分数 Circuits and Systems-II:Express Briefs, Vol. 55, No. 8, Communications, Vol. 88, 2005, pp. 2629–2631.
August 2008, pp. 738–742. 3. S. Wang and W. -J Lin, 17. W. -S. Tung, H. -C Chiu and Y. -C. Chiang,
带宽（FWB），表示为： “C-Band Complementary Metal-Oxide-Semiconductor “Implementation of Millimetre-Wave Bandpass Filter with
Bandpass Filter Using Active Capacitance Circuit,” IET MMIC Technology,”IET Electronics Letters, Vol. 41, No.
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GHz PI Filter by CMOS Compatible ICP Deep Trench
无源滤波器的一大劣势是高损耗。 “Millimeter wave CMOS Design,” IEEE Journal of Solid- Technology,”IET Electronics Letters, Vol. 43, No.7, March
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由于电阻（金属）、电介质和辐射损耗 5. K. Tanii, K. Wada, M. Makimoto, S. Igarashi, K. Fukui 19. K. Ma, S. Mou and K. S. Yeo, “Miniaturized 60-GHz On-Chip
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的影响，无源谐振器的Q值降低。无源 and K. Kobinata, “Millimeter Wave CMOS Lowpass Device Letters, Vol. 34, No. 8, August 2013, pp. 945–947.
and Highpass Filters with Transmission Zeros Based on
波导滤波器的庞大结构势必增加了全集 Coupled Line and Transmission Line,” Microwave and 20. L. Su and C. -K. C. Tzuang, “A Narrowband CMOS Ring
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成收发器模块的尺寸。而无源平面滤波 pp. 2808–2813. Periphery of 2 Percent Free-Space Wavelength,”IEEE
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Zero-dB Fully Integrated Active Bandpass Filter at Ka-Band
无源滤波器的重大缺陷还包括不兼 in 0.18-μm CMOS,” IEEE MTT-S International Microwave 21. K. Mouthaan, X. Lu, F. Hu, Z. Hu and A. Taslimi, “Status
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容可调谐元件以及带宽和插入损耗的权 7. X. Wang, H. -S. Wu and C. -K. C. Tzuang, “430 GHz Filters in Standard CMOS,” IEEE International Wireless
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参考号 工艺技术 f C (GHz) 3 dB Bw (%) IL (dB) 芯片面积（mm ） 23. G. Prigent, E. Rius, F. L. Pennec, S. L. Maguer, C. Quendo,
G. Six, and H. Happy, “Design of Narrow-Band DBR
22 Si MEMS 60 8 1.5 22.8 Planar Filters in Si-BCB Technology for Millimeter wave
Applications,” IEEE Transactions on Microwave Theory
22 Si MEMS 60 2.7 2.8 22.0 and Techniques, Vol.52, No. 3, March 2004, pp. 1045–1051.
24. Y. C. Lee and C. S. Park, “A Fully Embedded 60-GHz
22 Si MEMS 60 4.3 3.4 26.0 Novel BPF for LTCC Systemin-Package Applications,”
23 Si BCB 50 5 4.6 12.2 IEEE Transactions on Advanced Packaging, Vol. 29, No.4,
November 2006, pp. 804–809.
23 Si BCB 94 5 7.0 3.9 25. J. -H. Lee, S. Pinel, J. Laskar and M. M. Tentzeris, “Design
and Development of Advanced Cavity-Based Dual-
24 LTCC 60 3.5 4.0 6.3 Mode Filters Using Low-Temperature Co-Fired Ceramic
Technology for V-Band Gigabit Wireless Systems,” IEEE
25 LTCC 60 4.1 2.8 4.0 Transactions on Microwave Theory and Techniques, Vol. 55,
8 SiGe 77 15.5 6.4 0.01 No. 9, September 2007, pp. 1869–1879.
26. S. S. Choi and D. C. Park, “Design and Fabrication of a
2 0.18 μm CMOS 60 10 9.3 0.14 New Dual-Mode Microstrip Ring Resonator Bandpass Filter
Using Micromachining Technology,” IEEE Korea-Japan
2 0.18 μm CMOS 77 10 9.3 0.11 Microwave Conference, December 2007.
12 0.18 μm CMOS 64 18.75 4.9 1.71 27. H. -C. Lu, C. -S. Yeh, S. -A. Wei and Y. -T Chou, “60 GHz
CPW Dual-Mode Rectangular Ring Bandpass Filter Using
9 0.13 μm CMOS 60 18.28 2.55 0.085 Integrated Passive Devices Process,” IEEE Asia-Pacific
Microwave Conference, December 2010, pp. 1883–1886.
14 0.18 μm CMOS 66 18.05 3.1 0.074 28. Y. Y. Lim, S. R. Vempati, N. Su, X. Xiao, J. Zhou, A. Kumar,
14 0.18 μm CMOS 61 18.03 3.5 0.074 P. P. Thaw, G. Sharma, T. G. Lim, S. Liu, K. Vaidyanathan
and J. H. Lau, “Demonstration of High Quality and
26 GaAs 58 15 3.4 4.0 Low Loss Millimeter Wave Passives on Embedded Wafer
Level Packaging Platform (EMWLP),” IEEE Electronic
27 IPD 62 19.35 2.3 0.49 Components and Technology Conference, June 2009.
29. S. Sarkar, D. A. Yeh, S. Pinel and J. Laskar, “60-GHz Direct-
28 IPD 77 8.3 2.46 3.36 Conversion Gigabit Modulator/Demodulator on Liquid-
Crystal Polymer,” IEEE Transactions on Microwave Theory
29 LCP 65 12.3 3.0 4.88 and Techniques, Vol. 54, No. 3, March 2006, pp. 1245–1252.
50 Microwave Journal China 微波杂志 Jan/Feb 2017